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发明公开
CN108396298A 一种Al、Mn、ZnO共掺杂复合薄膜的制备方法 无效 - 驳回

一种Al、Mn、ZnO共掺杂复合薄膜的制备方法
摘要：
本发明公开一种Al、Mn、ZnO共掺杂复合薄膜的制备方法，包括以下步骤：S1、清洗衬底，去除衬底表面油污和杂质；S2、采用磁控溅射设备，以ZnO靶、Al2O3靶与MnO2靶为溅射靶材，ZnO靶、Al2O3靶与MnO2靶在水平面以三角形分布，且ZnO靶、Al2O3靶与MnO2靶分别与水平面形成60º夹角，所述衬底位于ZnO靶、Al2O3靶与MnO2靶的延长线交点处；S3、向磁控溅射设备的真空腔室内通入溅射气体氩气，ZnO靶的功率400W、Al2O3靶的功率150W、MnO2靶的功率150W，Ar总通入量为100sccm，工作气压2.0Pa，溅射1.5小时，得到Al、Mn、ZnO共掺杂复合薄膜；改变靶材各自的溅射参数可进行任意掺杂元素、任意掺杂量的掺杂，且所制备薄膜掺杂都非常均匀。
摘要（英）：

The invention discloses a preparation method of an Al, Mn and ZnO codoped composite film. The preparation method comprises the following steps that 1, a substrate is cleaned for removing oil stains and impurities on the surface of the substrate; 2, a magnetron sputtering device is adopted, ZnO targets, Al2O3 targets and MnO2 targets are used as sputtering targets, the ZnO targets, the Al2O3 targets and the MnO2 targets are distributed in a triangular shape in a horizontal plane, the ZnO target, the Al2O3 targets and the MnO2 targets correspondingly form included angles of 60 degrees with the horizontal plane, and the substrate is positioned at the intersection point of extension lines of the ZnO targets, the Al2O3 targets and the MnO2 targets; and 3, sputtering gas argon is introduced intoa vacuum chamber of the magnetron sputtering device, the power of each ZnO target is 400W, the power of each Al2O3 target is 150W, the power of each MnO2 target is 150W, the total ar flux is 100sccm,the working pressure is 2.0Pa, and sputtering is carried out for 1.5 hours to obtain the Al, Mn and ZnO codoped composite film. The sputtering parameters of the targets can be changed to carry out doping of any doping element and any doping amount, and the dope of a prepared film is very uniform.

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