The invention discloses an electrode lead of a perpendicular multi-junction silicon photovoltaic device. The electrode lead comprises P regions and N regions, wherein the P regions and the N regions form PN alternative diode array, a P-type conductive isolation line is arranged on a longitudinal line array of the PN alternative diode array, a chip is partitioned into two regions by the P-type conductive isolation line after doping, and the two regions are respectively a sensitive region and a region reserved by electrode laying. The invention also provides an integration method of the perpendicular multi-junction silicon photovoltaic device. The perpendicular multi-junction silicon photovoltaic device has the beneficial effects that 1, all P regions can be connected by the P-type isolationlayer (to form parallel connection of the diode array); 2, the sensitive region is prevented from being shielded by an electrode metal layer; 3, the problem of metal electrode photoetching sleeve inaccuracy is solved; and 4, the maximum solid solubility of aluminum is utilized, and favorable ohmic contact is formed.