The invention relates to a pre-sorting method for the service life of an insulated gate bipolar transistor, and relates to a detection method for a transistor. The method comprises the steps: A, searching an intersection point of crossing characteristic curves under different temperatures according to the crossing characteristics of an IGBT, and defining a drive voltage corresponding to the intersection point as a crossing point gate electrode voltage VCross; B, selecting a sample according to IGBT products of the selected batch, taking VCross as a drive voltage, carrying out the accelerated aging testing of the IGBTs, recording a short-circuit current in a module testing process through a short-circuit testing circuit, determining a function relation between the short-circuit current of the IGBT and the number of accelerated circulation times according to a testing result, and recording the number of accelerated circulation times when all bonding wires are broken; C: carrying out theaccelerated aging testing of a to-be-tested IGBT module for Ns times, calculating the remaining service life of the module through the built function relation between the short-circuit current of theIGBT and the number of accelerated circulation times after testing, and completing the screening of the module according to the specific requirements of the remaining service life. The method achievesthe purpose of deducing the remaining service life of the IGBT through a few of samples.