The invention belongs to the technical field of power electronic conversion and discloses a three-level converter driving circuit with negative voltage bootstrapping. The driving circuit comprises negative voltage bootstrapping driving circuits of insulated gate bipolar transistors S1 and S3 and negative voltage bootstrapping driving circuits of insulated gate bipolar transistors S2 and S4. Because of completely identical three phases of three-level topology, four insulated gate bipolar transistors, namely S1, S2, S3 and S4 respectively, are arranged on each phase, the negative voltage bootstrapping driving circuits corresponding to S1 and S3 share one same independent direct-current power supply, and the negative voltage bootstrapping driving circuits corresponding to S2 and S4 share onesame independent direct-current power supply. By adopting the driving circuit, the number of independent direct-current power supplies is reduced, the size of equipment can be reduced, negative voltage power-off of an IGBT (Insulated Gate Bipolar Translator) is achieved with a small amount of elements, the consequence that devices are damaged since negative voltage power-off of a conventional three-level driving circuit cannot be achieved can be greatly reduced, and the interference resistance of equipment can be improved.