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发明授权
CN108615812B 一种基于记忆二极管的三态内容寻址存储器 有权

一种基于记忆二极管的三态内容寻址存储器
摘要：
本发明公开了一种基于记忆二极管的三态内容寻址存储器，包括若干兼具存储数据、擦写数据和比较数据功能的内核单元；内核单元呈阵列排列，以行为单位的所有内核单元连接同一匹配线，以列为单位的所有内核单元连接同一对互补搜寻信号线；内核单元包括两个记忆二极管；第一记忆二极管和第二记忆二极管的顶电极分别接一对互补搜寻信号线，第一记忆二极管和第二记忆二极管的底电极连接同一匹配线。本发明可以大大缩小三态内容寻址存储器芯片尺寸，减小功耗；本发明三态内容寻址存储器结构简单，有效简化制备工艺并且降低制备成本；本发明提出并实现了与标准CMOS工艺兼容性的记忆二极管，适合于当前快速发展的集成电路技术。
摘要（英）：

The present invention discloses a ternary content addressable memory (TCAM) based on a memory diode, comprising a plurality of kernel units having the functions of storing data, erasing data and comparing data. The kernel units are arranged in an array. All kernel units in the same row are connected to the same match line, and all kernel units in the same column are connected to the same pair of complementary search signal lines. The kernel unit comprises two memory diodes. The top electrodes of the first memory diode and the second memory diode are respectively connected to a pair of complementary search signal lines, and the bottom electrodes of the memory diode and the second memory diode are connected to the same match line. The present invention can greatly reduce the size and power consumption of the TCAM chip. The TCAM of the invention has a simple structure, and can effectively simplify preparation processes and reduce preparation costs. The present invention proposes and achieves a memory diode compatible with the standard CMOS process, which is suitable for the current rapidly evolving integrated circuit technologies.

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