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发明公开
CN108630261A 半导体存储装置 有权

半导体存储装置
摘要：
一种半导体存储装置包括：存储单元阵列和行解码器，所述存储单元阵列和所述行解码器沿着第一方向设置在基板上；以及多条联接线，所述多条联接线用于将所述存储单元阵列和所述行解码器电联接。所述联接线中的每一条包括：第一导线，所述第一导线沿着所述第一方向设置；第二导线，所述第二导线与所述第一导线平行地设置；以及焊盘，所述焊盘联接在所述第一导线与所述第二导线之间，并且通过接触插塞电联接至所述存储单元阵列或所述行解码器。所述联接线沿着所述第一方向从相应焊盘的两侧布线。
摘要（英）：

A semiconductor memory device includes a memory cell array and a row decoder disposed in a first direction over a substrate and a plurality of coupling lines for electrically coupling the memory cell array and the row decoder. Each of the coupling lines includes a first conductive line disposed in the first direction; a second conductive line disposed parallel to the first conductive line; and a pad coupling the first conductive line and the second conductive line, and coupled to the memory cell array or the row decoder through a contact plug. The coupling lines are routed from both sides of the pad in the first direction.

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