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发明公开
CN108630744A III-V族半导体二极管 有权

III-V族半导体二极管
摘要：
一种堆叠状的III-V族半导体二极管(10)，其具有至少1019N/cm3的掺杂剂浓度的n+层(12)和50-675μm的层厚度(D1)、具有1012-1016N/cm3的掺杂剂浓度的n-层(14)、10-300μm的层厚度(D2)、具有5·1018-5·1020N/cm3的掺杂剂浓度和大于2μm的层厚度(D3)的p+层(18)，其中，这些层以所提及的顺序依次、分别包括GaAs化合物或由GaAs化合物构成并且单片地构造，n+层(12)或p+层(18)构造为衬底，并且所述n-层(14)的下侧与所述n+层(12)的上侧材料锁合地连接，所述堆叠状的III-V族半导体二极管(10)包括具有大于0.5μm的层厚度(D4)的第一缺陷层(16)，缺陷层(16)布置在n-层内，并且缺陷层(16)具有1·1013N/cm3与5·1016N/cm3之间的范围内的缺陷浓度。
摘要（英）：

A stacked III-V semiconductor diode that has an n+ layer having a dopant concentration of at least 1019 N/cm3, an n− layer having a dopant concentration of 1012 N/cm3 to 1016 N/cm3, a layer thickness of 10 μm to 300 μm, a p+ layer having a dopant concentration of 5·1018 N/cm3 to 5·1020 cm3 and a layer thickness greater than 2 μm, the layers following each other in the specified order, each including a GaAs compound or being made from a GaAs compound and having a monolithic design, the n+ layer or the p+ layer being a substrate, and a lower side of the n− layer being integrally connected to an upper side of the n+ layer. The stacked III-V semiconductor diode including a first defect layer having a layer thickness greater than 0.5 μm, the defect layer being situated within the n− layer.

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