The invention discloses a display structure production method. The production method comprises the steps of manufacturing an active matrix display control chip substrate on a flexible substrate; growing a short-wavelength III-V group semiconductor light-emitting device quantum light-emitting thin film on a sapphire wafer; enabling one surface, with a metal thin film bonding layer, of the active matrix display control chip substrate to be subjected to metal bonding with the sapphire wafer with the short-wavelength III-V group semiconductor light-emitting device quantum light-emitting thin film;enabling the whole flexible active matrix display control chip substrate to be covered with the short-wavelength III-V group semiconductor light-emitting device quantum light-emitting thin film; performing etching to form short-wavelength III-V group semiconductor light-emitting device quantum light-emitting arrays; filling gaps among the arrays; performing planarization processing; setting a transparent ITO thin film electrode layer on the surfaces of the arrays; respectively depositing at least three primary-color photoluminescence excitation thin film layers and carrying out etching to form an active thin film matrix pixel array; and covering the active thin film matrix pixel array with a transparent protective layer to obtain the display structure.