The present embodiments provides a mechanism in which the thickness of a scanned wafer shape is calculated to determine a profile, and a calculated PV value and a set predictive PV value for each profile are used such that a delta correction value and an abrasion endpoint time are calculated and then applied to an abrasion time of each wafer which is being abraded. Therefore, the present embodiments achieve excellent planarization of wafer surfaces, and simultaneously control a plurality of controllers to reduce facility costs.