The invention provides a chemical mechanical polishing pad which is suitable for conducting surface planarization treatment on at least one of a semiconductor substrate, an optical substrate and a magnetic substrate. The chemical mechanical polishing pad comprises a polishing layer composed of a polyurethane foaming body; and the polishing layer comprises a mixture which is composed of alicyclic polyisocyanate and aromatic polyisocyanate with the mass ratio being 1:4-1:1, prepolymer which is obtained through reaction of polytetramethylene ether glycol, a curing agent which is composed of polyphthalic acid diethylene glycol ester glycol and polyamine, and hollow polymer microspheres, wherein the mass ratio of the polytetramethylene ether glycol to the polyphthalic acid diethylene glycol ester glycol is 20:1-1:20. Through the polishing pad, scratches on the surface of a polished material can be inhibited, the removal rate is increased, and the acceptable planarizartion and defects are provided.