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发明授权
CN108806608B 一种驱动晶体管的阈值电压侦测方法及装置、显示装置 有权

一种驱动晶体管的阈值电压侦测方法及装置、显示装置
摘要：
本发明的实施例提供一种驱动晶体管的阈值电压侦测方法及装置、显示装置，涉及显示技术领域，能够解决现有的显示装置中，因阈值电压漂移过大超出侦测范围而导致补偿效果不佳的问题；所述阈值电压侦测方法包括：获取驱动晶体管的第一阈值电压；第一阈值电压为：驱动晶体管在第一驱动数据驱动下的阈值电压；根据驱动晶体管的第一阈值电压，获取驱动晶体管的阈值参考电压；根据阈值参考电压和第一驱动数据，获取驱动晶体管的第二驱动数据，并获取第二阈值电压；第二阈值电压为：驱动晶体管在第二驱动数据驱动下的阈值电压，且第二驱动数据大于第一驱动数据。
摘要（英）：

A method for detecting a threshold voltage of a driving transistor (DTFT), comprising: acquiring a first threshold voltage (Vth1) of a driving transistor (DTFT), the first threshold voltage (Vth1) being the threshold voltage of the driving transistor (DTFT) under the driving of first driving data (Vdata1) (S01); acquiring a threshold reference voltage (Vref) of the driving transistor (DTFT) according to the first threshold voltage (Vth1) of the driving transistor (DTFT) (S02); acquiring second driving data (Vdata2) of the driving transistor (DTFT) according to the threshold reference voltage (Vref) and the first driving data (Vdata1), the second driving data (Vdata2) being greater than the first driving data (Vdata1) (S03); acquiring a second threshold voltage (Vth2) of the driving transistor (DTFT), the second threshold voltage (Vth2) being the threshold voltage of the driving transistor (DTFT) under the driving of the second driving data (Vdata2) (S04).

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