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发明公开
CN108807378A 鳍式场效应管及其形成方法 无效 - 驳回

鳍式场效应管及其形成方法
摘要：
本发明提供一种鳍式场效应管及其形成方法，所述形成方法包括：提供衬底，所述衬底包括第一器件区和第二器件区，且所述衬底上具有多个分立的鳍部；形成横跨所述鳍部的伪栅极；在所述伪栅极露出的鳍部上形成层间介质层，所述层间介质层露出所述伪栅极；去除所述伪栅极在所述层间介质层内形成第一开口；形成填充满所述第一开口的初始金属栅极；对所述初始金属栅极进行图形化处理，在所述初始金属栅极内形成第二开口，在沿垂直于衬底表面的方向上，所述第二开口贯穿所述初始金属栅极；在所述第一器件区形成第一金属栅极，在所述第二器件区形成第二金属栅极。本发明形成的鳍式场效应管电学性能得到提高。
摘要（英）：

The invention provides a fin field-effect transistor and a forming method thereof. The forming method comprises: providing a substrate, the substrate including a first device region and a second device region, and the substrate having a plurality of discrete fins; forming a dummy grid electrode across the fins; forming an interlayer dielectric layer on the fins exposed the dummy grid electrode, the interlayer dielectric layer exposing the dummy grid electrode; removing a first opening of the dummy grid electrode, the first opening formed in the interlayer dielectric layer; forming an initial metal grid electrode fully filling the first opening; performing graphical processing on the initial metal grid electrode, to form a second opening in the initial metal grid electrode, on the directionvertical to a substrate surface, the second opening penetrating the initial metal grid electrode; forming a first metal grid electrode in the first device region and forming a second metal grid electrode in the second device region. Electrical properties of the fin field-effect transistor are improved.

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