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发明公开
CN108807584A 一种GaAs-锑烯异质结太阳电池及其制备方法 无效 - 驳回

一种GaAs-锑烯异质结太阳电池及其制备方法
摘要：
本发明属于太阳能电池的技术领域，公开了一种GaAs‑锑烯异质结太阳电池及其制备方法。所述GaAs‑锑烯异质结太阳能电池由下至上依次包括背电极、GaAs衬底、锑烯层、顶电极。本发明通过在GaAs片上通过分子束外延方式直接生长二维原子晶体材料锑烯，制备的太阳电池具有GaAs/锑烯异质结，锑烯层与GaAs之间形成良好的带隙匹配，实现太阳能电池高的光电转换效率。
摘要（英）：

The invention belongs to the technical field of solar cells, and discloses a GaAs-antimonene heterojunction solar cell and a fabrication method thereof. The GaAs-antimonene heterojunction solar cell sequentially comprises a back electrode, a GaAs substrate, an antimonene layer and a top electrode from bottom to top. The two-dimensional atom crystal material antimonene is directly grown on a GaAs piece by a molecular beam epitaxy, the fabricated solar cell has a GaAs/antimonene heterojunction, favorable bandgap matching is formed between the antimonene layer and GaAs, and high photoelectric conversion efficiency of the solar cell is achieved.

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