The invention provides a method for simulating and testing burns between the outer semi-conductive layer and the aluminum sheath of a cable, which comprises the following steps of: cutting a faulty cable sample and a new cable sample for standby; grounding the aluminum sheath of the new cable sample; applying a power frequency voltage to the outer semi-conductive layer thereof, adjusting the voltage value until the new cable has burns similar to that of the faulty cable, and recording the voltage value and the current value; using a high frequency power supply and selecting a power frequency value from it, and applying a high frequency voltage to the outer semi-conductive layer of the other new cable sample, by which performing impact within the impact standard numbers until the new cablesample has burns similar to that of the faulty cable within the impact standard numbers, then recording the voltage value on both ends of the outer semi-conductive layer; and selecting other power frequency values to get and record the voltage values corresponding to different power frequencies. According to the method for simulating and testing burns between the outer semi-conductive layer and the aluminum sheath of the cable, the burn simulation test between the outer semi-conductive layer and the aluminum sheath of the cable is implemented, which provides a theoretical reference for safe transportation of the cables.