The invention belongs to the technical field of electron microscope tests, and particularly discloses a transmission electron microscope in-situ high-frequency electric test chip from direct-current frequencies to microwave frequencies. The transmission electron microscope in-situ high-frequency electric test chip comprises a silicon substrate, insulating layers and metallic circuits. The metalliccircuits are arranged on the insulating layer on the front surface of the silicon substrate; the metallic circuits at least comprise two metallic electrodes for being grounded and inputting signals;the side, which is close to a sample, of each metallic electrode is connected with the side, which is close to the sample, of the corresponding metallic electrode by a 50-75 omega parallel resistor, so that the transmission electron microscope in-situ high-frequency electric test chip can be matched with impedance of microwave signal input ends; the total thickness of the insulating layer on the front surface of the silicon substrate is 1.5-5.0 micrometers, so that parasitic capacitance of the electrodes and silicon wafers is smaller than 1 pF; the metallic electrodes extend onto a window forplacing the sample or extends out of the window by 0-20 micrometers; measurement electrodes are led out from the ends, which are close to the sample, of the signal input electrodes and are used for signal in-situ measurement. The transmission electron microscope in-situ high-frequency electric test chip has the advantages that in-situ tests can be carried out on optional waveform signals in the ranges of 0-6 GHz by the transmission electron microscope in-situ high-frequency electric test chip, and accordingly the application ranges of in-situ electron microscopes can be expanded.