A dual-wavelength semiconductor laser chip structure comprises an epitaxial wafer I and an epitaxial wafer II. The lower end face of the epitaxial wafer I is provided with an outwardly-protruding strip light-emitting area in width of 3-4micron; the upper end face of the epitaxial wafer II is provided with an inwardly-recessed grooved light-emitting area in width of 8-10micron. The lower end face of the epitaxial wafer I is fixedly adhered to the upper end face of the epitaxial wafer II, and the strip light-emitting area is inserted into the corresponding grooved light-emitting area. The epitaxial wafer I and the epitaxial wafer II are adhered through an adhesion process, and the strip light-emitting area of the epitaxial wafer I is inserted into the grooved light-emitting area of the epitaxial wafer II to form a laser chip with the characteristic of simultaneous emitting of dual-wavelength laser. A manufacturing process is simple, and the dual-wavelength semiconductor laser chip structure can be completely applied to fields of dual-wavelength laser medicine and night vision gun sight. Due to avoiding of a light coupling technique and complex optical lenses, manufacturing cost of dual-wavelength semiconductor lasers is sharply reduced.