The invention discloses an atomization assisting CVD thin film deposition method. The atomization assisting CVD thin film deposition method is characterized by comprising the following steps that a, an atomization assisting CVD thin film deposition device is designed; b, a plane substrate being about to form a film is placed in an installing hole in a substrate template, then the substrate template is horizontally placed on the upper plate face of a lower lifting plate, and the position of the lower lifting plate is adjusted; d, after a temperature of a reaction area reaches a preset temperature, firstly an atomization source is opened, and is used for atomizing liquid precursors into aerosol precursors, the aerosol precursors are input into a buffering mixing chamber through carrier gas sent out of the atomization source; and e, after the temperature of the reaction area is close to a room temperature or is 45 DEG C or below, the operation that the precursors are input into the buffering mixing chamber through a gas phase matter inflow pipe and an aerosol inflow pipe firstly stops, then a gas sucking pump is closed, finally, a sealing cover is opened, the substrate template is taken out, and finally a substrate is taken down from the substrate template. The thin film deposition method is high in deposition efficiency, reasonable in process arrangement and high in thin film quality.