The embodiment of the invention provides a method of semiconductor preparation process. The method comprises the steps of providing a substrate that sequentially comprises a barrier layer, a semiconductor layer and an insulating layer from top to bottom, wherein a part of the surface of the barrier layer is covered with a mask; etching the barrier layer and the mask by dry etching to remove, etchand eliminate the barrier layer not covered by the mask, and etching the mask into a patterned mask; etching the semiconductor layer to remove the semiconductor layer not covered by the barrier layer;etching the barrier layer not covered by the patterned mask to form a groove that penetrates the barrier layer but does not penetrate the semiconductor layer; removing the patterned mask by cleaning.The method of the semiconductor preparation process provided by the embodiment can solve the problems that the semiconductor preparation process steps are cumbersome and complicated and consume timeand labor.