The invention relates to a semiconductor photoelectric material and in particular to a CdS/SiC hollow mesoporous nanofiber, and belongs to the field of nano technologies. Principal forming elements ofthe nanofiber are Cd, S, Si and C, wherein a principal expression mode of the Si and C elements is a support body formed by SiC, a principal expression mode of the Cd and S elements is a modificationbody of the SiC, and CdS accounts for 4-16% of a total mass of the nanofiber. The CdS/SiC hollow mesoporous nanofiber has efficient and stable visible light catalytic activity. A method for preparingthe nanofiber is simple and controllable, and has good repeatability.