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发明公开
CN109972149A 一种Bi2Te3/Bi2O3/TiO2三元异质结薄膜的制备方法 有权

一种Bi2Te3/Bi2O3/TiO2三元异质结薄膜的制备方法
摘要：
本发明公开了一种Bi2Te3/Bi2O3/TiO2三元异质结薄膜的制备方法。先通过阳极氧化法在钛板表面制备二氧化钛(TiO2)纳米薄膜，再通过一步恒电位沉积法在TiO2纳米薄膜表面制备碲化铋/氧化铋二元纳米复合材料(Bi2Te3/Bi2O3)，得到Bi2Te3/Bi2O3/TiO2三元异质结薄膜。通过X射线衍射证明了异质结薄膜中含有Bi2Te3，Bi2O3和TiO2三种半导体物质，扫描电镜结果显示Bi2Te3/Bi2O3/TiO2三元异质结薄膜由Bi2Te3/Bi2O3纳米花和TiO2纳米管构成。紫外可见漫反射吸收光谱说明Bi2Te3/Bi2O3/TiO2三元异质结薄膜在紫外可见光范围内的光吸收性能均优于纯TiO2。将本发明的Bi2Te3/Bi2O3/TiO2三元异质结薄膜应用于Q235碳钢的光生阴极保护，能够将Q235碳钢阴极极化至‑812mV以下，说明Q235碳钢已经进入很好的阴极保护状态。
摘要（英）：

The invention discloses a preparation method of a Bi2Te3/Bi2O3/TiO2 ternary heterojunction film. The preparation method comprises the following steps: first, preparing a titanium dioxide (TiO2) nano film on the surface of a titanium plate by means of an anodic oxidation method; and then preparing a bismuth telluride/bismuth oxide binary nano composite material (Bi2Te3/Bi2O3) on the surface of theTiO2 nano film by means of a one-step constant potential deposition method to obtain the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film. X-ray diffraction verifies that the heterojunction film containsthree semiconductor substances: Bi2Te3, Bi2O3 and TiO2. A scanning electron microscope result shows that the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film is composed of a Bi2Te3/Bi2O3 nanoflower anda TiO2 nanotube. An ultraviolet visible diffuse reflection absorption spectrum illustrates that the optical absorption properties of the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film in an ultraviolet visible light range are superior to those of pure TiO2. By applying the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film to photo-produced cathode protection of Q235 carbon steel, the cathode of the Q235 carbon steel can be polarized to below -812 mV, which illustrates that the Q235 carbon steel enters a very good cathodic protection state.

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