Embodiments of a three-dimensional (3D) storage device are disclosed. The 3D storage device has an architecture with an increased number of bit lines. In an example, a 3D storage device includes a substrate; a plurality of memory strings, each memory string extending vertically over the substrate in the memory region; and a plurality of bit lines over the plurality of memory strings. At least onebit line of the plurality of bit lines is electrically connected to a single memory string of the plurality of memory strings.