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发明公开
CN110164962A 高击穿电压的肖特基二极管及其制作方法 有权

高击穿电压的肖特基二极管及其制作方法
摘要：
本发明公开了一种高击穿电压的肖特基二极管，主要解决现有肖特基二极管器件击穿电压过低无法广泛应用在高压高功率器件中的问题。其包括：欧姆接触金属Au层、欧姆接触金属Ti层、高掺杂n型Ga2O3衬底和低掺杂n型Ga2O3薄膜，低掺杂n型Ga2O3薄膜上开有的斜坡凹槽台，斜坡凹槽台侧壁上设有的金属环，斜坡凹槽台台面上设有的肖特基电极Ni层和肖特基电极Au层，肖特基电极Ni层和肖特基电极Au层的两侧设有绝缘介质，肖特基电极Ni层和肖特基电极Au层与绝缘介质之上设有肖特基场板。本发明避免了在反向关断时随着电压的增加肖特基结的边缘处承受的电场强度尖锐集中分布，提高了击穿电压，可用作功率器件和高压开关器件。
摘要（英）：

The invention discloses a Schottky diode with a high breakdown voltage, and mainly solves the problems that an existing Schottky diode device is too low in breakdown voltage and cannot be widely applied to high-voltage and high-power devices. The Schottky diode comprises an ohmic contact metal Au layer, an ohmic contact metal Ti layer, a highly-doped n-type Ga2O3 substrate and a low-doped n-type Ga2O3 film. The low-doped n-type Ga2O3 film is provided with a slope groove table. A metal ring is arranged on the side wall of the slope groove table. A Schottky electrode Ni layer and a Schottky electrode Au layer are arranged on the table board of the slope groove table. Insulating media are arranged on the two sides of the Schottky electrode Ni layer and the two sides of the Schottky electrodeAu layer. Schottky field plates are arranged on the Schottky electrode Ni layer, the Schottky electrode Au layer and the insulating media. According to the invention, the sharp and concentrated distribution of electric field intensity borne by the edge of the Schottky junction along with voltage increase during reverse turn-off is avoided, while the breakdown voltage is improved. The Schottky diode can be used as a power device and a high-voltage switch device.

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