The invention discloses a junction type barrier Schottky diode capable of reducing a reverse leakage current. The junction type barrier Schottky diode comprises an N+ substrate layer, an N- epitaxiallayer, a plurality of P-type ion implantation regions, two silicon dioxide isolation layers, a first metal layer and a second metal layer, wherein a groove is formed in the center of the surface of each P-type ion implantation region, and the depth of each groove is gradually increased from the center of the junction type barrier Schottky diode to the edge; the N- epitaxial layer between every twoadjacent P-type ion implantation regions, and the first metal layer form a first Schottky contact region; and the area of the first Schottky contact area is gradually enlarged from the center of thejunction barrier Schottky diode to the edge. On the premise that the junction type barrier Schottky diode can ensure that the reverse leakage current and forward on resistance are not degraded, the temperature difference between the center and the edge of the junction type barrier Schottky diode is reduced, so that the phenomenon of local electromigration is effectively inhibited, and the reverseleakage current of the junction type barrier Schottky diode is reduced.