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发明公开
CN110416869A 利用离子注入提高Tm：YAP激光器输出功率的方法 无效 - 撤回

利用离子注入提高Tm：YAP激光器输出功率的方法
摘要：
利用离子注入提高Tm：YAP激光器输出功率的方法，涉及固体激光器，属于激光领域，目的是为了满足2微米波段固体激光器的发展需求。本发明所述的利用离子注入提高Tm：YAP固体激光器输出功率的方法为：对Tm：YAP晶体进行离子注入。所述离子注入采用伽马射线辐照的方式实现。采用Co60作为所述伽马射线的放射源。通过改变辐照剂量来改变固体激光器的输出功率。实验证明，采用本发明提供的方法，能够使Tm：YAP激光器的斜效率提高至少5％。
摘要（英）：

The invention discloses a method for improving Tm:YAP laser output power by ion injection, relates to solid lasers, belongs to the field of laser, and aims to meet the development requirements of a solid laser of a 2-micrometer waveband. The method for improving the Tm:YAP laser output power by the ion injection comprises the step of carrying out ion injection on Tm:YAP crystal. The ion injectionis realized through a gamma ray irradiation way. Co60 is adopted as a gamma ray radioactive source. The output power of a solid laser is changed through changing a radiation dosage. An experiment proves that the method provided by the invention can be adopted to improve the slope efficiency of the Tm:YAP laser by at least 5%.

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