The invention discloses a multi-level inverter circuit topology, which includes a first switching device, a second switching device and a plurality of bidirectional conduction switching modules. The first switching device and the second switching device are IGBT anti-parallel diodes. Each of the bidirectional conduction switching modules is formed by reversely connecting switching devices of two IGBT anti-parallel diodes in series, or is formed by reversely connecting switching devices of two IGBT anti-parallel diodes in parallel, or is formed by reversely connecting two bidirectional conduction reserve-blocking IGBTs, or is a Vienna circuit module. The device selection is symmetrical from the outside to the center. The topology can reduce the number of switching devices of a multilevel converter circuit and reduce the cost and switching loss, and has the advantage of fewer switching devices.