The invention discloses a three-level converter based on SiC MOSFETs, each phase of the three-level converter comprises an upper bridge arm and a lower bridge arm which are connected in parallel, andthe upper bridge arm and the lower bridge arm are connected through an inductor; each bridge arm is composed of two SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). According to the technical scheme provided by the invention, the loss of the three-level converter can be reduced, and the efficiency is improved.