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发明公开
CN110534555A 基于r面Al2O3图形衬底的β-Ga2O3薄膜制作方法 无效 - 撤回

基于r面Al2O3图形衬底的β-Ga2O3薄膜制作方法
摘要：
本发明公开了一种基于r面Al2O3衬底的β-Ga2O3薄膜，主要解决现有技术薄膜位错密度高，薄膜质量差，器件迁移率低的问题。其自下而上包括：200-500um厚的Al2O3衬底层(1)、30-110nm厚的β-Ga2O3成核层(2)、200-3000nm厚的(-201)面β-Ga2O3层(3)，其中衬底层采用r面Al2O3衬底且该衬底表面设有通过金刚石砂纸打磨形成的锯齿状条纹。本发明降低了β-Ga2O3薄膜位错密度，减小极化效应，有效提升了器件迁移率，改善了制备的Ga2O3薄膜质量，可用于制作高电子迁移率晶体管，发光二极管半导体器件。
摘要（英）：

The invention discloses a beta-Ga2O3 film based on an r-plane Al2O3 substrate, which mainly solves the problems of high film dislocation density, poor film quality and low device mobility in the priorart. The film comprises an Al2O3 substrate layer (1) with the thickness of 200 to 500 um, a beta-Ga2O3 nucleating layer (2) with the thickness of 30 to 110 nm, and a (-201) plane beta-Ga2O3 layer (3)with the thickness of 200 to 3000 nm from bottom to top. The substrate layer adopts the r-plane Al2O3 substrate, and the surface of the substrate is provided with sawtooth-shaped stripes formed by polishing through diamond abrasive paper. The dislocation density of the beta-Ga2O3 film is reduced, the polarization effect is reduced, the device mobility is effectively improved, the quality of the prepared Ga2O3 film is improved, and the method can be used for manufacturing high-electron-mobility transistors and light-emitting diode semiconductor devices.

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