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发明公开
CN110571343A 发光二极管器件及其制备方法、显示基板 无效 - 驳回

发光二极管器件及其制备方法、显示基板
摘要：
本发明提供一种发光二极管器件及其制备方法、显示基板，属于显示技术领域，其可至少部分解决现有的发光二极管器件由于电子迁移率相对空穴迁移率高而造成的亮度以及效率低的问题。本发明的一种发光二极管器件，包括：发光层；分别位于发光层两侧的第一电极和第二电极；位于发光层与第二电极之间的电子传输层，电子传输层两侧分别与发光层和第二电极连接，电子传输层中包括纳米颗粒材料；其中，在任意两个子电子传输层中，电子传输层具有至少两个子电子传输层，靠近发光层的子电子传输层的纳米颗粒材料的粒径比远离发光层的子电子传输层的纳米颗粒材料的粒径小。
摘要（英）：

The invention provides a light-emitting diode device, a preparation method thereof and a display substrate, belongs to the technical field of display, and can at least partially solve the problems oflow brightness and low efficiency of the existing light-emitting diode device due to high electron mobility relative to hole mobility. The light emitting diode device of the invention comprises a light-emitting layer, a first electrode, a second electrode and an electron transport layer, wherein the first electrode and the second electrode are located on the two sides of the light-emitting layer respectively; the electron transport layer is located between the light-emitting layer and the second electrode, two sides of the electron transport layer are respectively connected with the light-emitting layer and the second electrode, and the electron transport layer comprises a nano-particle material; the electron transport layer is provided with at least two sub-electron transport layers, andin any two sub-electron transport layers, the particle size of the nano-particle material of the sub-electron transport layer close to the light-emitting layer is less than that of the nano-particle material of the sub-electron transport layer away from the light-emitting layer.

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