The invention provides a growth method of a high-quality and large-size silicon carbide (SiC) crystal. The growth method aims to improve the quality of the grown SiC crystal and eliminate a plane hexagonal cavity defect. The growth method comprises the following steps: a crucible loaded with a SiC raw material and a seed crystal is placed in a single-crystal growth furnace, the quick upward-pushing distance range of the crucible is 5-50 mm, the seed crystal gets away from a high temperature area, the crucible slowly descends after reaching certain temperature and pressure conditions, the descending distance is consistent with the upward-pushing distance of the crucible, then under the certain temperature and pressure conditions, the SiC raw material is sublimated and crystallized on the seed crystal, the crystal is cooled, and the SiC single crystal is obtained. The growth method has the advantages that in the initial stage of crystal growth, the seed crystal gets away from the high temperature area, seed crystal ablation caused by the high temperature is eliminated, and thus the plane hexagonal cavity defect is eliminated; and meanwhile full utilization of the SiC raw material isguaranteed, and the high-quality and large-size SiC crystal is obtained.