The invention discloses a resistive random access memory based on a two-dimensional MXene material and a preparation method. The resistive random access memory comprises a substrate, and a first electrode layer, an active layer and a second electrode layer which are stacked on the substrate in sequence, wherein the active layer is made of a self-oxidized two-dimensional MXene material or a mixtureof the two-dimensional MXene material and a resistive random material; the resistive random material comprises an oxide, a chalcogenide, a nitride, a silicon-based material, an organic resistive random material, an organic-inorganic hybrid resistive random material and the like. According to the invention, the two-dimensional material MXene is self-oxidized or is combined with the oxide in a doping manner so as to be used as an active layer to prepare the RRAM device, rich active sites on the surface of the two-dimensional MXene can be utilized, and the excellent performance of resistive random materials such as oxide can also be utilized, so that the memory device which is simple in preparation process and more excellent in performance can be obtained. Compared with a memory based on a two-dimensional material, the memory provided by the invention has the advantages that the device preparation process is simplified, the cost is reduced, and the commercialization is facilitated.