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发明公开
CN110759346A 一种多晶硅还原炉电极及其制作方法 无效 - 驳回

一种多晶硅还原炉电极及其制作方法
摘要：
本发明公开了一种多晶硅还原炉电极，包括上电极体和下电极体，所述上电极体与石墨座锥孔配合，所述上电极体和下电极体通过凸出连接部连接，所述凸出连接部的直径均大于下电极体和上电极体；所述上电极体的外表面设有导电涂层；所述凸出连接部的外表面设有复合绝缘层，所述复合绝缘层包括过渡金属层和陶瓷绝缘层；所述过渡金属层设于凸出连接部外表面；所述陶瓷绝缘层设于过渡金属层远离凸出连接部的表面上。本发明所述多晶硅还原炉电极通过在凸出连接部的外表面设置过渡金属层，提高了陶瓷绝缘层和电极体的附着力和使用寿命。本发明还公开了所述多晶硅还原炉电极的制作方法，该制作方法制得的电极中涂层和电极体结合强度高，具有较高的使用寿命。
摘要（英）：

The invention discloses a polycrystalline silicon reduction furnace electrode. The polycrystalline silicon reduction furnace electrode comprises an upper electrode body and a lower electrode body, theupper electrode body is matched with a taper hole of a graphite base, the upper electrode body and the lower electrode body are connected through a protruding connecting part, and the diameter of theprotruding connecting part is larger than that of the lower electrode body and that of the upper electrode body; a conductive coating is arranged on the outer surface of the upper electrode body; a composite insulating layer is arranged on the outer surface of the protruding connecting part and comprises a transition metal layer and a ceramic insulating layer. The transition metal layer is arranged on the outer surface of the protruding connecting part; the ceramic insulating layer is arranged on the surface, away from the protruding connecting part, of the transition metal layer. According to the polycrystalline silicon reduction furnace electrode, the transition metal layer is arranged on the outer surface of the protruding connecting part, the adhesive force of the ceramic insulating layer and the electrode body is improved, and the service life is prolonged. The invention further discloses a manufacturing method of the polycrystalline silicon reduction furnace electrode, and the electrode prepared by the manufacturing method is high in bonding strength of the coating and the electrode body and long in service life.

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