The invention provides a low-electromagnetic-interference power device terminal structure, which includes: a metallized drain, a first conductivity type of semiconductor substrate, and a first conductivity type of semiconductor epitaxial layer, which are stacked in order from bottom to top; and a second conductivity type of semiconductor main junction, a second conductivity type of semiconductor equipotential ring, a first conductivity type of cut-off ring, a second conductivity type of semiconductor field limiting ring, a first dielectric layer, a second dielectric layer, a third dielectric layer, a conductive field plate, a resistor, and a metallized source. An HK dielectric layer can be introduced between the field limiting ring and the field plate. The semiconductor field limiting ring, the HK dielectric layer and the field plate form a MIS capacitor structure and are connected in series with an adjacent polycrystalline silicon resistor, so that an RC absorption network is formed between the high potentials of the source and the drain, can effectively suppress the dv/dt and di/dt generated by a power device during high-speed switching, and alleviates the EMI noise.