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发明公开
CN110838787A 一种改善驱动性能的SiC MOSFET主动驱动电路 有权

一种改善驱动性能的SiC MOSFET主动驱动电路
摘要：
本发明公开了一种改善驱动性能的SiC MOSFET主动驱动电路，本发明引入了漏极电流ID和漏源极电压Vds的瞬时变化状态对SiC MOSFET的开关过程状态进行判断，通过逻辑判断得到作为中间量的开通过程检测判断信号和关断过程检测判断信号，并最终对驱动电流注入控制电路和驱动电流分流电路进行控制，在不同的阶段注入驱动电流Ig2或分流驱动电流Ig3，配合主驱动电路输出的驱动电流Ig1得到多种栅极的驱动电流IG的控制效果，从而使得本发明的主动驱动电路能够在抑制电压电流过冲的同时，保持开关损耗不增加，并使得SiC MOSFET的开关速度基本不受影响。
摘要（英）：

The invention discloses a SiC MOSFET active driving circuit with improved driving performance. The instantaneous change states of the drain current ID and the drain-source voltage Vds are introduced to judge the switching process state of the SiC MOSFET; an opening process detection judgment signal and a closing process detection judgment signal which are used as intermediate quantities are obtained through logic judgment; finally, a driving current injection control circuit and a driving current shunt circuit are controlled; driving current Ig2 or shunt driving current Ig3 is injected in different stages; the driving current Ig1 output by the main driving circuit is matched to obtain the control effect of the driving current IG of various gates, so that the switching loss is not increasedwhile the voltage and current overshoot is inhibited according to the active driving circuit disclosed in the invention, and the switching speed of the SiC MOSFET is basically not influenced.

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