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CN1555559B 多态非易失性存储系统二进制模式下的选择性运行方法 失效 - 权利终止 转让

  • Patent Title: 多态非易失性存储系统二进制模式下的选择性运行方法
  • Patent Title (English): Selective operation of a multi-state non-volatile memory system in a binary mode
  • Application No.: CN02818168.9
    Application Date: 2002-09-13
  • Publication No.: CN1555559B
    Publication Date: 2012-05-30
  • Inventor: 陈健
  • Applicant: 圣地斯克公司
  • Applicant Address: 美国加州
  • Assignee: 圣地斯克公司
  • Current Assignee: 桑迪士克科技有限责任公司
  • Current Assignee Address: 美国加州
  • Agency: 北京律盟知识产权代理有限责任公司
  • Agent 刘国伟
  • Priority: 09/956,340 2001.09.17 US; 10/229,258 2002.08.26 US
  • International Application: PCT/US2002/029177 2002.09.13
  • International Announcement: WO2003/025949 EN 2003.03.27
  • Date entered country: 2004-03-17
  • Main IPC: G11C16/04
  • IPC: G11C16/04 ;  G11C11/34
多态非易失性存储系统二进制模式下的选择性运行方法
Abstract:
一种快速非易失性存储系统，其通常以多存储状态运行其存储器，并且可以在两态模式下运行其部分或所有存储器块。选择的这两种状态是所有状态中距离最远的。因此，在两态模式下运行提供了更大的余量。这使得在两种状态下运行的存储器编程速度更块，使用寿命也更长，而这些优点比多状态运行能提供的增大数据存储密度的优点更吸引人。
Abstract(English):

A flash non-volatile memory system that normally operates its memory cells in multiple storage states is provided with the ability to operate some selected or all of its memory cell blocks in two states instead. The two states are selected to be the furthest separated of the multiple states, thereby providing an increased margin during two state operation. This allows faster programming and a longer operational life of the memory cells being operated in two states when it is more desirable to have these advantages than the increased density of data storage that multi-state operation provides.

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