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发明授权
CN1670943B 存储器的操作方法 失效 - 权利终止 复审申请

存储器的操作方法
摘要：
本发明是关于一种存储器的操作方法，此方法是先设定存储器在第一栅极开启电压的初始状态，然后，再依序进行一步骤。上述的步骤为首先施加一偏压至栅极与第一接合区域之间，以使电洞迁移且停留在电荷捕获层中。接着，估算对偏压反应而产生的读取电流以决定是否达到第二栅极开启电压，其中第二栅极开启电压低于第一栅极开启电压。之后，由变化栅极与第一接合区域之间的偏压，以重复多次的步骤，直到达到第二栅极开启电压，且存储器处于可程序化状态。
摘要（英）：

A method of programming the storage comprises setting the storage to an initial state of a first grid threshold voltage, performing a processing sequence including: applying a voltage bias between the grid and the first junction region to cause electric hole to migrate towards and be retained in the trapping layer, and evaluating a read current generated in response to the voltage bias to determine whether a second grid threshold voltage is reached, wherein the second grid threshold voltage is lower than the first grid threshold voltage. The processing sequence is repeated a number of times by varying one or more time the voltage bias between the grid and the first junction region until the second grid threshold voltage is reached and the storage is in a program state.

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