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发明授权
CN1828837B 以多孔氮化镓作为衬底的氮化镓膜的生长方法 失效 - 权利终止 转让

以多孔氮化镓作为衬底的氮化镓膜的生长方法
摘要：
本发明涉及一种氢化物气相外延(HVPE)氮化镓(GaN)材料中采用多孔GaN作为衬底的生长方法，其特征在于首先制作多孔GaN衬底的掩膜，然后将掩膜板放入感应耦合等离子中进行刻蚀，接着用酸或碱溶液去除阳极氧化铝，得到多孔GaN衬底；其次是将上述衬底放入氧化物外延生长反应室，在N2气氛下升温750-850℃，通NH3保护模板的GaN层，于1000-1100℃开始通HCL进行GaN生长；本发明仅需采用电化学的方法腐蚀沉积在GaN表面的金属Al层，即可制成多孔网状结构来作为GaN外延的掩膜，大大简化了光刻制作掩膜的工艺。
摘要（英）：

The invention relates to a multihole GaN substrate growth method in hydride gas phase epitaxy (HVPE) gallium nitride (GaN) material. It features first making multihole GaN substrate mask, then putting mask in induction coupling plasma to proceed etching, using acid or aqueous alkali removing anode aluminium oxide to obtain multihole GaN substrate, putting above-mentioned substrate in oxide epitaxial growth reaction chamber, heating up to 750-850 degree centigrade under N2 ambience, filling NH3 to protect GaN layer of the mask, filling HCL to proceed GaN growth at 1000-1100 degree centigrade. The present invention only need corrosion depositing on GaN surficial metal Al layer adopting electrochemical method, to make multihole network structure use as GaN epitaxial mask, greatly simplifying photo etching making mask technology.

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