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Invention Grant
CN1898603B 带钼移相器的远紫外掩模 失效 - 权利终止

  • Patent Title: 带钼移相器的远紫外掩模
  • Patent Title (English): Extreme ultraviolet mask with molybdenum phase shifter
  • Application No.: CN200480039053.9
    Application Date: 2004-12-22
  • Publication No.: CN1898603B
    Publication Date: 2012-07-11
  • Inventor: S-H·李
  • Applicant: 英特尔公司
  • Applicant Address: 美国加利福尼亚州
  • Assignee: 英特尔公司
  • Current Assignee: 英特尔公司
  • Current Assignee Address: 美国加利福尼亚州
  • Agency: 上海专利商标事务所有限公司
  • Agent 李玲
  • Priority: 10/750,122 2003.12.31 US
  • International Application: PCT/US2004/043651 2004.12.22
  • International Announcement: WO2005/067010 EN 2005.07.21
  • Date entered country: 2006-06-26
  • Main IPC: G03F1/32
  • IPC: G03F1/32 ;  G03F1/22
带钼移相器的远紫外掩模
Abstract:
本发明描述一种方法，包括：提供衬底，该衬底包括第一区域和第二区域；在衬底上形成多层镜面；在多层镜面上形成移相器层；在移相器层上形成覆盖层；去除第二区域中的覆盖层和移相器层；用EUV光照射第一区域和第二区域；并从第一区域和第二区域反射EUV光。本发明还描述一种结构，包括：衬底，该衬底包括第一区域和第二区域；位于第一区域和第二区域上的多层镜面；位于区域中的多层镜面上的移相器层；位于第二区域中的多层镜面上的光强均衡器层；以及位于第一区域中的相移层上以及第二区域中的光强均衡器层上的覆盖层。
Abstract(English):

The present invention describes a method including: providing a substrate, the substrate including a first region and a second region; forming a multilayer mirror over the substrate; forming a phase-shifter layer over the multilayer mirror; forming a capping layer over the phase-shifter layer; removing the capping layer and the phase-shifter layer in the second region; illuminating the first region and the second region with EUV light; and reflecting the EUV light off the first region and the second region. The present invention also describes a structure including: a substrate, the substrateincluding a first region and a second region; a multilayer mirror located over the first region and the second region; a phase-shifter layer located over the multilayer mirror in the region; an intensity balancer layer located over the multilayer mirror in the second region; and a capping layer located over the phase-shifter layer in the first region and over the intensity balancer layer in the second region.

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