The photodiode cell ( 1 ) includes at least one photosensitive area ( 3 ), made in a silicon semiconductor substrate ( 2 ), for receiving light, particularly coherent light, and a passivation layer and a dielectric layer ( 4 ). The passivation layer is composed of at least a first silicon oxide layer ( 5 ) and a second nitride layer ( 6 ), made on the photosensitive area. The second nitride layeris made with a thickness within a determined margin, so as to be situated in a zone with the most constant possible light reflectivity independently of the thickness of the first layer. An etch ( 7 )can be performed on one portion of the dielectric layer ( 4 ) or on the first layer ( 5 ) corresponding to half of the reception surface of the photosensitive area in order to obtain a reflectivity percentage mean of the light to be sensed by the photodiode cell.