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发明授权
CN1949393B 闪存器件的编程方法 有权

闪存器件的编程方法
摘要：
一种用于对非易失性存储器件编程的方法，包括将第一虚电压施加到多级单元(MLC)。第一编程电压施加至该MLC以对该MLC编程。该MLC被检验是否该MLC通过该第一编程电压正确地编程。在已施加该第一虚电压之后但在施加该第一编程电压之前，第二虚电压施加至该MLC，该第二虚电压比该第一虚电压高N伏，其中，施加至该MLC的该第二虚电压是充分低的电压，以便该第二虚电压不改变该MLC的初始状态。在已施加该第二虚电压之后，第三虚电压施加至该MLC，该第三虚电压比该第二虚电压高N伏。
摘要（英）：

A method for programming a non-volatile memory device includes applying a first dummy voltage to a Multi-Level Cell (MLC). A first program voltage is applied to the MLC to program the MLC. The MLC is verified whether or not the MLC has been programmed correctly by the first program voltage. A second dummy voltage is applied to the MLC after the first dummy voltage has been applied and before the first program voltage has been applied, the second dummy voltage being N volt higher than the first dummy voltage, wherein the second dummy voltage applied to the MLC is of sufficiently low voltage, so that the second dummy voltage does not change an initial state of the MLC. A third dummy voltage is applied to the MLC after the second dummy voltage has been applied, the third dummy voltage being N volt higher than the second dummy voltage.

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