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实用新型
CN202652052U 一种基于焊接型IGBT与压接型SiC二极管的反并联电路 失效 - 权利终止 转让

一种基于焊接型IGBT与压接型SiC二极管的反并联电路
摘要：
本实用新型提供一种基于焊接型IGBT与压接型SiC二极管的反并联电路，包括串联的焊接型IGBT及其相应的压接型SiC二极管，压接型SiC二极管反并联于其相应的焊接型IGBT。本实用新型提供的一种基于焊接型IGBT与压接型SiC二极管的反并联电路，在多个IGBT串联的电路中，一个IGBT损坏后形成短路失效的模式，不会造成整个电路的断路。
摘要（英）：

The utility model provides a reverse parallel circuit based on welding type IGBTs and pressed type SiC diodes. The reverse parallel circuit comprises the welding type IGBTs in series connection and the corresponding pressed type SiC diodes, and the pressed type SiC diodes are in reverse parallel connection with the corresponding welding type IGBTs. The utility model provides the reverse parallel circuit based on the welding type IGBTs and the pressed type SiC diodes, in a circuit with series connection of a plurality of IGBTs, a mode of short circuit failure is formed when one IGBT is damaged, and the breaking of the whole circuit does not happen.

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