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实用新型
CN203192833U 应用MQW生长的绿光GaN基LED外延结构 失效 - 权利终止

应用MQW生长的绿光GaN基LED外延结构
摘要：
应用MQW生长的绿光GaN基LED外延结构，涉及LED外延生产技术领域，特别是GaN基绿光LED的生长技术，包括依次生长在衬底上的GaN成核层、非掺杂GaN层、n型GaN层、InGaN/GaN多量子阱有源层和p型GaN层，InGaN/GaN多量子阱有源层包括GaN垒层、InGaN量子阱层和变温GaN过渡层，在InGaN/GaN多量子阱有源层的GaN垒层和InGaN量子阱层之间生长低In组分的缓冲层shallowwell。本实用新型大大降低了与垒之间的应力，能够缓解量子阱、垒之间的应力差，因此量子阱中的极化电场也大大降低，在垒与量子阱之间缓冲层shallowwell使得极化电场得到降低，使得电子与空穴的波函数在空间上的分离现象得到缓解，使得有效辐射复合得到提升。
摘要（英）：

A green GaN-based LED epitaxial structure with the application of MQW growth relates to the technical field of LED epitaxial production, in particular a growth technology of a GaN-based green LED. The green GaN-based LED epitaxial structure comprises a GaN nucleating layer, a non-doped GaN layer, an n-type GaN layer, an InGaN/GaN multi-quantum well active layer, and a p-type GaN layer, which are sequentially grown on a substrate. The InGaN/GaN multi-quantum well active layer comprises a GaN barrier layer, an InGaN quantum well layer, and a changing-temperature GaN transition layer. A low-In composition buffer layer shallow well is grown between the GaN barrier layer and the InGaN quantum well layer of the InGaN/GaN multi-quantum well active layer. According to the utility model, the stress between quantum wells and barriers is greatly reduced, and the stress difference between the quantum wells and the barriers is alleviated, so that polarized electric fields in the quantum wells are greatly decreased; and the buffer layer shallow well between the quantum wells and the barriers enables the polarized electric fields to be decreased, so that the phenomenon of spatial separation of wave functions of electrons and holes is alleviated and the effective radiation composition is improved.

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