The utility model provides a fast recovery diode, the diode includes: it has the N type silicon substrate (1) of oxide layer (2) to have three that have a spaced P type silicon area (3) and surface, polycrystal layer (5) on oxide layer (2), anode metal layer on polycrystal layer (5) with N type silicon substrate (1) is gone up rather than relative cathode metal layer, P type silicon area (3) has deep energy level doped region (4), the utility model discloses utilize the polycrystal to realize the protection of laser annealing terminal, avoid laser annealing to lead to the impaired so that withstand voltage inefficacy in terminal.