The utility model provides a silica -based ge light detector array and manufacturing method, manufacturing method includes: 1 )Form N++ type doped layer in the silicon substrate, 2 )In N++ type dopedlayer surface formation intrinsic ge layer, 3 )In intrinsic ge layer surface formation P+ type doped region array, 4 )Form N+ type doped region between each P+ type doped region, 5 )Form metal electrode in each P+ type doped region and each N+ type doped region surface, 6 )The sculpture goes out the deep trouth between each P+ type doped region, forms the isolation structure. Utility model cuts off adjacently through form the deep trouth between adjacent silica -based ge light detector the crosstalk path of photocurrent between the silica -based ge light detector to reduce or eliminate adjacently the photocurrent crosstalks feasible being located between the silica -based ge light detector the silica -based ge light detector's at silica -based ge light detector array structure edge photocurrent can be close to with the silica -based ge light detector's that lies in silica -based light ge detector array structure center photocurrent mutually.