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发明公开
EP0013314A3 Semiconductor device comprising a cooling body 失效
包含冷却体的半导体器件

Semiconductor device comprising a cooling body
摘要：
Disclosed is a semiconductor device (10) having the following construction. A power transistor chip (100) is secured to a thermally conductive, electrically insulative plate (300) via a first solder layer (240). The electrically insulative plate (300) is in turn secured to a heat sink (160) made of copper via a second solder layer (260). Slits (362) having a U-shaped cross-section are formed on both faces of the electrically insulative plate (300) so asto lead to the outside a gas which is entrapped into the first and second solder layers (240, 260) when they are formed. Further, a thermally conductive layer (340) is formed on both faces ofthe electrically insulative plate (300) at portions other than the portions of the slits (362).
摘要（中）：

公开了具有以下结构的半导体器件（10）。 功率晶体管芯片（100）经由第一焊料层（240）固定到导热电绝缘板（300）。 电绝缘板（300）又通过第二焊料层（260）固定到由铜制成的散热器（160）上。 在电绝缘板（300）的两个表面上形成具有U形横截面的狭缝（362），以便在外部引入被截留在第一和第二焊料层（240,260）中的气体 它们形成。 此外，在除了狭缝（362）的部分之外的部分，在电绝缘板（300）的两个表面上形成导热层（340）。

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