An electrophotographic plate consists of a substrate (1) with a conductive surface and four successive layers (2,3,4 and 5) the third of which is optional. The first layer (2) is formed from Se and 3 to 10%by weight of As, and the second layer (3) is formed from Se, 40 to 47% by weight of Te and 3 to 10% by weight of As. The fourth layer (5) may be formed from an organic semiconductor Se only, or Se and up to 10% by weight of As. The conductive surface of the substrate (1) may be closest to the first layer (2) or to the fourth layer (5). This electrophotographic plate is sensitive to radiation with wavelengths longer than 700 nm and therefore permits the use of a semiconductor laser in an electrophotographic device. In making the plate, the substrate is maintained between 50°C and 80°C at least whilst the fourth layer (5) is formed, thereby to reduce the residual potential. All the layers are formed independently.