发明公开
- 专利标题: Sensing system for a capacitive semiconductor memory
- 专利标题(中): 读取系统用于电容半导体存储器。
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申请号: EP80107619.1申请日: 1980-12-04
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公开(公告)号: EP0031491A2公开(公告)日: 1981-07-08
- 发明人: Chakravarti, Satya Narayan , Heller, Lawrence Griffith , Pricer, Wilbur David
- 申请人: International Business Machines Corporation
- 申请人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构: Lewit, Leonard (AT)
- 优先权: US108242 19791227
- 主分类号: G11C11/24
- IPC分类号: G11C11/24
摘要:
A calibrated sensing system is provided for sensing charge in a storage medium, such as a storage capacitor (16), coupled to an access or bit/sense line (B/S) which compensates for most sources of variability in the storage medium and in the access line. In the system, the unknown charge stored in the storage medium is transferred to a first capacitor (28) or potential well via the access line. A high charge state of the storage medium is written into the storage medium and known fractional packets of charge are prepared therefrom, transferred selectively to a second capacitor (30) or potential well and compared with the unknown charge in the first potential well to determine the relative level of the unknown charge that was stored in the storage medium. By selectively using two or more fractional packets of charge multilevel sensing is performed.
公开/授权文献
- EP0031491B1 Sensing system for a capacitive semiconductor memory 公开/授权日:1986-12-03
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