发明公开
EP0031491A2 Sensing system for a capacitive semiconductor memory 失效
读取系统用于电容半导体存储器。

Sensing system for a capacitive semiconductor memory
摘要:
A calibrated sensing system is provided for sensing charge in a storage medium, such as a storage capacitor (16), coupled to an access or bit/sense line (B/S) which compensates for most sources of variability in the storage medium and in the access line. In the system, the unknown charge stored in the storage medium is transferred to a first capacitor (28) or potential well via the access line. A high charge state of the storage medium is written into the storage medium and known fractional packets of charge are prepared therefrom, transferred selectively to a second capacitor (30) or potential well and compared with the unknown charge in the first potential well to determine the relative level of the unknown charge that was stored in the storage medium. By selectively using two or more fractional packets of charge multilevel sensing is performed.
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