发明公开
- 专利标题： Gas sensor
- 专利标题（中）： 气体检测器
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申请号： EP81102856.2申请日： 1981-04-14
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公开(公告)号： EP0038078A1公开(公告)日： 1981-10-21
- 发明人: Ohno, Yoshio
- 申请人： KABUSHIKI KAISHA KIRK
- 申请人地址： 16-1, Nishi-shinbashi 2-chome Minato-ku Tokyo JP
- 专利权人： KABUSHIKI KAISHA KIRK
- 当前专利权人： KABUSHIKI KAISHA KIRK
- 当前专利权人地址： 16-1, Nishi-shinbashi 2-chome Minato-ku Tokyo JP
- 代理机构： Blumbach Weser Bergen Kramer Zwirner Hoffmann Patentanwälte
- 优先权： JP49204/80 19800416; JP49205/80 19800416; JP49206/80 19800416; JP49207/80 19800416; JP49208/80 19800416; JP177220/80 19801217
- 主分类号： H01C7/22
- IPC分类号： H01C7/22 ; H01C17/12 ; H01C13/00 ; G01N27/12 ; G01K7/18
摘要：
A platinum thin film (12) is formed by sputtering on an insulating substrate (11) and heat-aged in a stairstep manner. A kerf (13) is formed in the platinum thin film to have a desired resistance, providing a temperature sensor, or a metal oxide semiconductor film is formed on the platinum thin film having formed therein the kerf, providing a gas sensor.
公开/授权文献
- EP0038078B1 Gas sensor 公开/授权日：1985-03-13
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