发明公开
- 专利标题： I2L semiconductor device
- 专利标题（中）： I2L半导体器件
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申请号： EP81305250申请日： 1981-11-04
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公开(公告)号： EP0052465A3公开(公告)日： 1983-07-20
- 发明人: Ikeda, Masashi
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP15993080 19801113
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H03K19/091 ; H01L21/82
摘要：
A semiconductor device includes a linear circuit section including a vertical npn transistor (TR4) and an I 2 L circuit section including a set of an injector pnp transistor (TR6) and an inverter npn transistor (TR5), these transistors being formed on the same wafer (30, 36) as for the vertical transistor (TR4). The inverter and injector transistors (TR5, TR6) are both lateral transistors.
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