Memory system comprising dynamic memory cells, wherein each cell comprises a switchable cell device (10) and a capacitive node (12), wherein said switchable cell device [10) is connected to a bit line (14) to read the charge stored at said (12) node and to a first word line (16) to selectively switch said cell device (10) responsive to a first signal in said word line (16).
Means are provided for rewriting the cell after reading without discharging the bit line to thereby improve cycle time. The cell includes an independently operated device (24) to access the capacitive storage node (12) to discharge the node of any charge thereon after the reading of a low or no charge bit on the capacitive storage node.