An integrated injection logic having a first semiconductor region (12) of first conductivity type, a second semiconductor region (14) of second conductivity type formed in the first semiconductor region, a plurality of third semiconductor regions (20a, 20b, 20c) of first conductivity type formed in the second semiconductor region, and a fourth semiconductor region (16) of second conductivity type formed in the first semiconductor region. A fifth semiconductor region (18) of second conductivity type is formed in the first semiconductor region and in the vicinity of the second semiconductor region and is connected to one (20c) of the plurality of third semiconductor regions in order to eliminate minority carriers stored in the first semiconductor region and the second semiconductor region.